* 45A, 60V
* rDS(ON) = 0.028Ω
* Temperature Compensating PSPICE Model
* Peak Current vs Pulse Width Curve
* UIS Rating Curve
* +175oC Operating Te.
such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transi.
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in .
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